| 摘要 |
A method of manufacturing a semiconductor device includes a bonding step of bonding a chip on a wiring board by means of a bonding layer, and a wire bonding step of bonding a wire to a pad on the chip while applying ultrasonic vibration after the bonding step. A material having an elastic modulus of 100 MPa or higher at a process temperature in the wire bonding step is used as the bonding layer.
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