发明名称 Method for fabricating semiconductor device
摘要 After a first insulating film is formed on a substrate, a wiring groove is formed in the first insulating film, and then a wire is formed inside the wiring groove. Subsequently, a protection film is formed on the first insulating film and on the wire, and then a hard mask film is formed on the protection film. After that, the hard mask film is patterned. Subsequently, the protection film and the first insulating film are partially removed using the patterned hard mask film to form an air gap groove, and then a second insulating film is formed to close an upper portion of the air gap groove for forming an air gap.
申请公布号 US7741228(B2) 申请公布日期 2010.06.22
申请号 US20080059768 申请日期 2008.03.31
申请人 PANASONIC CORPORATION;RENESAS TECH CORP 发明人 UEKI AKIRA;HARADA TAKESHI;ISHII ATSUSHI
分类号 H01L21/302;H01L21/461 主分类号 H01L21/302
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