| 摘要 |
<p>PURPOSE: A semiconductor device and a manufacturing method thereof are provided to supply the semiconductor device with eliminating a level shifter circuit by enabling a direct interface between a LDMOS and a CMOS. CONSTITUTION: A high concentration N-type buried layer(201) of the first conductive type and an N-type deep well(210) are formed on a substrate. Gate oxides and gate electrodes(283) are formed on the prescribed part of the upper substrate. A first gate oxide(281) is formed with adjoining to a P-type body(230). A second gate oxide(282) is formed with adjoining an N-type well(250). The second gate oxide has the thickness heavier than the first gate oxide.</p> |
