| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce the deformation of the form of a conductive pattern in a semiconductor device. <P>SOLUTION: The semiconductor device 2 includes a base substance 22 and a semiconductor element 24. The base substance 22 includes an insulating layer 221 and the conductive pattern 222 formed on the insulating layer 221. The semiconductor device has a continuous inclined plane between the end of the conductive pattern 222 and the insulating layer 221. The semiconductor element 24 is mounted to the conductive pattern 222. <P>COPYRIGHT: (C)2010,JPO&INPIT |
