| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device for obtaining a microfabricated three-dimensional device. <P>SOLUTION: According to the method of manufacturing the semiconductor, a second layer 12 having a line-and-space pattern is etched using an eighth layer 25, as a mask, having a line-and-space pattern extending in a direction intersecting with a direction in which the second layer 12 extends, to obtain the two-dimensionally arranged second layer 12. An underlying layer is etched by using the second layer to form two-dimensionally arranged pillars. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
