| 发明名称 |
PROCESS FOR PRODUCING SILICIC COATING, SILICIC COATING AND SEMICONDUCTOR DEVICE |
| 摘要 |
A silicic coating of 2.4 g/cm3 or higher density, obtained by forming a silicic coating precursor with the use of at least one type of silane compound having a photosensitive functional group and thereafter irradiating the silicic coating precursor with at least one type of light. This silicic coating can be used as a novel barrier film or stopper film for semiconductor device.
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| 申请公布号 |
US2010133692(A1) |
申请公布日期 |
2010.06.03 |
| 申请号 |
US20100700215 |
申请日期 |
2010.02.04 |
| 申请人 |
FUJITSU LIMITED |
发明人 |
KOBAYASHI YASUSHI;YOSHIKAWA KOUTA;NAKATA YOSHIHIRO;IMADA TADAHIRO;OZAKI SHIROU |
| 分类号 |
H01L23/48;C09D7/00;H01L21/3205 |
主分类号 |
H01L23/48 |
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