SEMICONDUCTOR DEVICE AND METHOD OF FABRRICATING THE SAME

摘要

PURPOSE: A semiconductor device and a manufacturing method thereof are provided to stably maintain a T-shape gate electrode by forming an insulating pattern which surrounds the lower leg part of the gate electrode. CONSTITUTION: An insulating layer is formed on a substrate(100). A first photo-sensitive pattern is formed on the insulating layer. A second photosensitive pattern exposing a part of the first photosensitive pattern is formed. A third photosensitive pattern(142) comprises a first opening(144) which exposes the first photosensitive pattern and a second photosensitive layer around the first photo sensitive pattern. A second opening exposing the insulating layer is formed by removing the exposed first photosensitive pattern. The exposed insulating layer is removed to form an insulating pattern which exposes the substrate. The insulating pattern includes a third opening. A T-shape gate electrode(156) comprising a leg part(152) and a head part(154), which fill the second and the third openings, is formed.