Verfahren zum Herstellen von CMOS Transistoren nichtflüchtiger Speicher und von vertikalen Bipolartransistoren mit hohem Verstärkungsfaktor,申请号DE19996042273-传众专利搜索

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发明名称	Verfahren zum Herstellen von CMOS Transistoren nichtflüchtiger Speicher und von vertikalen Bipolartransistoren mit hohem Verstärkungsfaktor
摘要
申请公布号	DE69942273(D1)	申请公布日期	2010.06.02
申请号	DE19996042273	申请日期	1999.07.21
申请人	STMICROELECTRONICS S.R.L., AGRATE BRIANZA	发明人	VENDRAME, LORIS;GHEZZI, PAOLO
分类号	H01L27/105;H01L21/8249;H01L29/06;H01L29/732	主分类号	H01L27/105
代理机构		代理人
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