发明名称 IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SENSOR
摘要 PURPOSE: An image sensor and a method of manufacture thereof combine the hydrogen ion in the part caused by the annihilation of the electronics. The loss of the electronics which becomes with the light is controlled, it improves. CONSTITUTION: The photo diode(104) is formed in the pixel region. The inter-layer insulating film(110) and metal wiring(120) are formed on the top of the photo diode. The photoresist pattern opening the pixel region on the top of the inter-layer insulating film is formed. The hydrogen ion is inserted in the pixel region by using the photoresist pattern as the ion implantation mask. The hydrogen domain is at least formed among the around photo diode and inside in one.
申请公布号 KR20100057237(A) 申请公布日期 2010.05.31
申请号 KR20080116185 申请日期 2008.11.21
申请人 DONGBU HITEK CO., LTD. 发明人 PARK, JI HWAN
分类号 H01L27/146 主分类号 H01L27/146
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