| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a substrate processing apparatus which promotes gas supply to spaces between adjacent substrates at low cost without reducing the number of substrates which is collectively processed, and at the same time, suppresses processing gas dilution. Ž<P>SOLUTION: The substrate processing apparatus includes: a processing chamber 2 for storing and processing stacked substrates 10; at least one processing gas supply nozzle 22a (22b) which extends along the inner wall of the processing chamber 2 in the stacking direction of the substrates to supply the processing gas to the inside of the processing chamber 2; a pair of inactive gas supply nozzles 22c (22d) which are provided so as to extend along the inner wall of the processing chamber 2 in the stacking direction of the substrates and so as to sandwich the processing gas supply nozzle from both sides thereof along the circumferential direction of the substrates and which supply an inactive gas to the inside of the processing chamber 2; inactive gas ejection ports 24c (24d) which are provided in the inactive gas supply nozzles; and an exhaust line 7a for exhausting the inside of the processing chamber 2. The inactive gas ejection ports are opened so as to inject the inactive gas to a space between the inner wall of the processing chamber 2 and the outer periphery section of the each wafer 10. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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