| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor device, capable of improving the efficiency of light emission, and reducing an operating voltage, by minimizing a variance of overall energy level of an electron blocking layer to reduce an effect due to polarization. <P>SOLUTION: The nitride semiconductor device includes an n-type nitride semiconductor layer; a p-type nitride semiconductor layer; an active layer formed between the n-type and p-type nitride semiconductor layers and consisting of quantum well layers and quantum barrier layers which are stacked alternately; a plurality of first nitride layers formed between the active layer and the p-type nitride semiconductor layer and formed of a material having a band gap energy higher than that of the quantum barrier layers; and an electron blocking layer having such a structure that a plurality of second nitride layers formed of a material having a band gap energy lower than that of the first nitride layers are alternately stacked. The plurality of first nitride layers have an energy level inclined at a predetermined gradient, but the closer to the p-type nitride semiconductor layer, the smaller a gradient of the energy level. <P>COPYRIGHT: (C)2010,JPO&INPIT |
