发明名称 |
NON-VOLATILE MEMORY DEVICE FOR 2-BIT OPERATION AND METHOD OF FABRICATING THE SAME |
摘要 |
A non-volatile memory device for 2-bit operation and a method of fabricating the same are provided. The non-volatile memory device includes an active region and a gate extending in a word line direction on a semiconductor substrate, and crossing each other repeatedly; a charge storage layer disposed below the gate, and confined at a portion where the gate and the active region cross; a charge blocking layer formed on the charge storage layer; a tunnel dielectric layer formed below the charge storage layer; first and second source/drain regions formed in the active region exposed by the gate; and first and second bit lines crossing the word line direction. The active region may be formed in a first zigzag pattern and/or the gate may be formed in a second zigzag pattern in symmetry with the first zigzag pattern.
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申请公布号 |
US2010117140(A1) |
申请公布日期 |
2010.05.13 |
申请号 |
US20100692197 |
申请日期 |
2010.01.22 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHOI BYUNG-YONG;PARK DONG-GUN;KIM YUN-GI;LEE CHOONG-HO;LEE YOUNG-MI;CHO HYE-JIN |
分类号 |
H01L29/792 |
主分类号 |
H01L29/792 |
代理机构 |
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地址 |
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