| 摘要 |
PURPOSE: An image sensor and a manufacturing method thereof are provided to improve photosensitivity by reducing an optical path through an array etch back structure. CONSTITUTION: A substrate(100) includes a pixel area and a logic circuit area. An interlayer insulation layer(140) includes a trench on the pixel area of the substrate and is formed on the substrate. First lenses are formed on the interlayer insulation layer of the pixel area and are formed for unit pixel. A second lens is formed inside the trench and covers the first lenses.
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