发明名称 |
METHODS FOR PREPARING A MELT OF SILICON POWDER FOR SILICON CRYSTAL GROWTH |
摘要 |
Methods for preparing a melt from silicon powder for use in growing a single crystal or polycrystalline silicon ingot in accordance with the Czochralski method that include removal of silicon oxides from the powder; application of a vacuum to remove air and other oxidizing gases; controlling the position of the charge relative to the heater during and after melting of the powder and maintaining the charge above its melting temperature for a period of time to allow oxides to dissolve; and use of a removable spacer between the crucible sidewall and the silicon powder charge to reduce oxides and silicon bridging. |
申请公布号 |
US2010107966(A1) |
申请公布日期 |
2010.05.06 |
申请号 |
US20090611567 |
申请日期 |
2009.11.03 |
申请人 |
MEMC ELECTRONIC MATERIALS, INC. |
发明人 |
JAVIDI MASSOUD;KIMBEL STEVEN L. |
分类号 |
C30B15/14 |
主分类号 |
C30B15/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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