| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element which can perform a high-current operation and has high light-emitting efficiency by altering an arrangement structure of electrodes. <P>SOLUTION: The present invention provides the semiconductor light emitting device 100 in which a conductive substrate 110, a first electrode layer 120, an insulating layer 130, a second electrode layer 140, a second semiconductor layer 150, an active layer 160, and a first semiconductor layer 170 are sequentially stacked. The contact area between the first electrode layer 120 and the first semiconductor layer 170 is 3 to 13% of the area of the semiconductor light emitting device 100. <P>COPYRIGHT: (C)2010,JPO&INPIT |
