发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF |
摘要 |
A semiconductor device and its manufacturing method are offered to increase the number of semiconductor devices obtained from a semiconductor wafer while simplifying a manufacturing process. After forming a plurality of pad electrodes in a predetermined region on a top surface of a semiconductor substrate, a supporter is bonded to the top surface of the semiconductor substrate through an adhesive layer. Next, an opening is formed in the semiconductor substrate in a region overlapping the predetermined region. A wiring layer electrically connected with each of the pad electrodes is formed in the opening. After that, a stacked layer structure including the semiconductor substrate and the supporter is cut by dicing along a dicing line that is outside the opening.
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申请公布号 |
US2010102460(A1) |
申请公布日期 |
2010.04.29 |
申请号 |
US20090575687 |
申请日期 |
2009.10.08 |
申请人 |
SANYO ELECTRIC CO., LTD.;SANYO SEMICONDUCTOR CO., LTD.;SANYO SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
TOMITA HIROAKI;SUTOU KAZUYUKI |
分类号 |
H01L23/488;H01L21/304;H01L21/768 |
主分类号 |
H01L23/488 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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