发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
摘要 A semiconductor device and its manufacturing method are offered to increase the number of semiconductor devices obtained from a semiconductor wafer while simplifying a manufacturing process. After forming a plurality of pad electrodes in a predetermined region on a top surface of a semiconductor substrate, a supporter is bonded to the top surface of the semiconductor substrate through an adhesive layer. Next, an opening is formed in the semiconductor substrate in a region overlapping the predetermined region. A wiring layer electrically connected with each of the pad electrodes is formed in the opening. After that, a stacked layer structure including the semiconductor substrate and the supporter is cut by dicing along a dicing line that is outside the opening.
申请公布号 US2010102460(A1) 申请公布日期 2010.04.29
申请号 US20090575687 申请日期 2009.10.08
申请人 SANYO ELECTRIC CO., LTD.;SANYO SEMICONDUCTOR CO., LTD.;SANYO SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 TOMITA HIROAKI;SUTOU KAZUYUKI
分类号 H01L23/488;H01L21/304;H01L21/768 主分类号 H01L23/488
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