发明名称 EUV light source, EUV exposure apparatus, and electronic device manufacturing method
摘要 Provided is an EUV light source which brings a target into the plasma state to radiate EUV light from the generated plasma. The target is one of a plurality of discrete targets. The surface area of each target is 1.5 times or more of that of a sphere which has the same material and the same mass as those of the target.
申请公布号 US2010097593(A1) 申请公布日期 2010.04.22
申请号 US20090591741 申请日期 2009.11.30
申请人 NIKON CORPORATION 发明人 MURAKAMI KATSUHIKO
分类号 G21K5/00;G03B27/54 主分类号 G21K5/00
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