| 摘要 |
A bipolar transistor includes an isolation layer formed in a bipolar region on a semiconductor substrate, a conductive film formed over an upper portion of the isolation layer, n+ and p+ junction regions formed within the conductive film, a first silicide film formed over portions of an upper boundary of the n+ and p+ junction regions, the first silicide film defining openings over the upper boundary of the n+ and p+ junction regions, a second silicide film formed in the openings defined by the first silicide film over the upper boundary portions of the n+ and p+ junction regions, a plurality of plugs connected to the second silicide film, and a plurality of electrodes connected to each of the plugs. In this way, embodiments not only suppress the occurrence of parasitic junction between wells, but also simplify the processes by omitting well processes by forming an isolation layer in a bipolar region, forming a conductive film, and applying ion-implantation process to the conductive film to form a junction region.
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