| 摘要 |
PURPOSE: A semiconductor memory device is provided to reduce off-leakage current in a stand-by mode by controlling an internal voltage supplied to an internal control circuit according to a cell block enable inside a memory bank. CONSTITUTION: An enable signal generator(1) receives a plurality of address decoding signals. The enable signal generator generates a first enable signal for selecting a first cell block. The enable signal generator generates a second enable signal for selecting a second cell block. A first internal voltage generator(21) generates a first internal voltage by determining whether a first power is supplied according to the first or the second enable signal. A second internal voltage generator(22) generates the second enable signal by determining whether the first power is supplied according to the second enable signal. |
