发明名称 |
Method for Making Split Dual Gate Field Effect Transistor |
摘要 |
A method for making a semiconductor device with at least two gate regions. The method includes providing a substrate region including a surface. Additionally, the method includes forming a source region in the substrate region by at least implanting a first plurality of ions into the substrate region and forming a drain region in the substrate region by at least implanting a second plurality of ions into the substrate region. The drain region and the source region are separate from each other. Moreover, the method includes depositing a gate layer on the surface and forming a first gate region and a second gate region on the surface.
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申请公布号 |
US2010087040(A1) |
申请公布日期 |
2010.04.08 |
申请号 |
US20090549192 |
申请日期 |
2009.08.27 |
申请人 |
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION |
发明人 |
XIAO DEYUAN;CHEN GARY;SENG TAN LEONG;LEE ROGER |
分类号 |
H01L21/8234 |
主分类号 |
H01L21/8234 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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