METHOD OF MANUFACTURING STRUCTURE BY ANISOTROPIC ETCHING, AND SILICON SUBSTRATE WITH ETCHING MASK

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a structure capable of reducing the space for disposing a correction etching mask when anisotropic-etching the structure and capable of arranging a number of structures on a silicon wafer, and to provide a silicon substrate with the etching mask. SOLUTION: In the method of manufacturing the structure and the silicon substrate with the etching mask, a basic etching mask 103 corresponding to a target shape having a convex corner and the correction etching mask 107 are formed on a single crystal silicon substrate 100. A first part of the correction etching mask 107 extends to the direction of <110>, the both ends are joined with the basic etching mask and the one end is joined to the convex corner of the basic etching mask 103. A second part is bonded to the first part at the side extending to the direction of <110> of the first part and has a convex corner. An opening extends crossing over the border where the first part and the second part are bonded. COPYRIGHT: (C)2010,JPO&INPIT