| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To prevent the degradation of element characteristics by disposing a terminal of a direction (x) of a source line contact on a dummy active region and by avoiding alignment displacement to the direction (x) of the source line contact. <P>SOLUTION: A nonvolatile semiconductor memory includes: a plurality of first active regions (AA) that are disposed along with the direction (x) in a memory cell array 100 and provided with a smaller dimension than a processing limit by exposure; a memory cell unit, provided in each of the plurality of the active regions AA having a memory cell (MC) and selection transistor (STS) to which a current path is connected in series along with a direction (y); and a straight line contact (LI) that is connected to an end of the memory cell unit and extended to the direction (x). In the memory, a region (SA) on which the straight line contact (LI) is disposed is a semiconductor region to which the plurality of the first active regions (AA) are connected by a second active region, and a bottom surface of the straight line contact (LI) is flat. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
