| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to prevent a cell from abnormally operating by additionally inserting impurity ions in a conductive layer in order to increase the concentration of the impurity ions after the conductive layer is initially doped with impurity ions. CONSTITUTION: A gate insulation layer(203) and a first conductive film(205) in which impurity ions are doped are stacked on a semiconductor substrate(201). Impurity ions with the same concentration as the initially doped impurity ions are additionally inserted to the first conductive layer. The first conductive layer, the gate insulation layer and the semiconductor substrate are etched to form a trench. A element isolation layer(207) is formed inside the trench. A dielectric layer and a second conductive layer are formed on the semiconductor substrate. The second conductive layer, the dielectric layer and the first conductive layer are etched.
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