| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device for solving such problems as variations in performance of a resistance change element and deterioration in reliability, and to provide its manufacturing method. SOLUTION: The semiconductor device includes: a first electrode including a first metal; a first sidewall part comprising an oxide insulator of the first metal and formed in the circumference of the first electrode; a resistance change layer formed on the first electrode; a second electrode including a second metal and formed on the first electrode with the resistance change layer sandwiched in between; and a second sidewall part comprising the oxide insulator of the second metal and formed in the circumference of the second electrode. COPYRIGHT: (C)2010,JPO&INPIT
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