| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor substrate which can implement a steep distribution of relative resistivity in a pn junction, and to provide a semiconductor substrate obtained thereby. Ž<P>SOLUTION: The method of manufacturing the semiconductor substrate includes: a first epitaxial growth step S1 wherein a semiconductor source gas and a first dopant gas are supplied into a reaction chamber wherein a carrier gas is circulated to grow a first epitaxial layer on the main surface of a semiconductor wafer; a first dopant gas supplying step S2, wherein after the first epitaxial growth step S1, the first dopant gas is supplied into the reaction chamber in a state that the semiconductor source gas is essentially not supplied, and a second epitaxial growth step S5, wherein after the first dopant gas supplying step S2, a second dopant gas having a conductivity type reverse to that of the first dopant gas is supplied together with the semiconductor source gas into the reaction chamber to grow a second epitaxial layer having a conductivity type reverse to that of the first epitaxial layer on the first epitaxial layer. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
|
