| 摘要 |
<p>PURPOSE: A method of forming a semiconductor device is provided to form uniformly the metal silicide film by preventing diffusion direction of metal. CONSTITUTION: The stacked pattern on which the first conductive film(205), the dielectric film(207), and the second conductive film(209) and the first hard mask pattern are laminated is formed between the gate insulation films(203) on the semiconductor substrate. The space between the stacked patterns is filled with the insulating layer. The trench opening the upper side of the second conductive film is formed. The metal layer is formed in the surface of the insulating layer. The metal comprising the metal layer is diffused to the lower direction of the second conductive film to form the metal silicide layer.</p> |
