| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate treatment method capable of reliably removing an etching residue or an ashing residue remaining on the surface of a prescribed film after plasma etching without damaging the film. SOLUTION: The substrate treatment method removes an etching residue remaining on the surface of a prescribed film after performing dry etching to a substrate, or an ashing residue remaining on the surface of the film after ashing the etching residue. The substrate treatment method includes: a first process for forming a liquid-like organic acid on the surface of the substrate, decomposing a CF polymer by the liquid-like organic acid, and dissolving the decomposed material into the liquid-like organic acid; and a second process for annealing the substrate after that, and vaporizing the organic acid and the dissolved material of the CF polymer dissolved to the organic acid for removing from the substrate. COPYRIGHT: (C)2010,JPO&INPIT |
