发明名称 |
Aminosilanes for Shallow Trench Isolation Films |
摘要 |
The present invention is a process for spin-on deposition of a silicon dioxide-containing film under oxidative conditions for gap-filling in high aspect ratio features for shallow trench isolation used in memory and logic circuit-containing semiconductor substrates, such as silicon wafers having one or more integrated circuit structures contained thereon, comprising the steps of: providing a semiconductor substrate having high aspect ratio features; contacting the semiconductor substrate with a liquid formulation comprising a low molecular weight aminosilane; forming a film by spreading the liquid formulation over the semiconductor substrate; heating the film at elevated temperatures under oxidative conditions. Compositions for this process are also set forth.
|
申请公布号 |
US2010009546(A1) |
申请公布日期 |
2010.01.14 |
申请号 |
US20090492201 |
申请日期 |
2009.06.26 |
申请人 |
AIR PRODUCTS AND CHEMICALS, INC. |
发明人 |
WEIGEL SCOTT JEFFREY;O'NEILL MARK LEONARD;HAN BING;CHENG HANSONG;XIAO MANCHAO;LEE CHIA-CHIEN |
分类号 |
H01L21/3105;C09D7/00;H01L21/314 |
主分类号 |
H01L21/3105 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|