| 摘要 |
A method for alloying of zinc selenide by impurities of transition metals comprises the preparation of base substrates of ZnSe and their annealing in soldered ampoule with a transition metal. The annealing is carried out at temperature 1473±5 K in quartz ampoule degasified to 10Torr, which one part contains the substrate, and elementary Se and grinded transition metal from of row Ti, V, Cr, Mn, Fe, Co, Ni in are contained opposite part coated with a layer of pyrolitic graphite. |
