ATOMIC LAYER DEPOSITION METHODS, METHODS OF FORMING DIELECTRIC MATERIALS, METHODS OF FORMING CAPACITORS, AND METHODS OF FORMING DRAM UNIT CELLS

摘要

Some embodiments include methods of forming metal-containing oxides. The methods may utilize ALD where a substrate surface is exposed to an organometallic composition while the substrate surface is at a temperature of at least 275°C to form a metal-containing layer. The metal-containing layer may then be exposed to at least one oxidizing agent to convert the metal-containing layer to a metal-containing oxide. The ALD may occur in a reaction chamber, with the oxidizing agent and the organometallic composition being present within such chamber at substantially non-overlapping times relative to one another. The oxidizing agent may be a milder oxidizing agent than ozone. The metal-containing oxide may be utilized as a capacitor dielectric, and may be incorporated into a DRAM unit cell.