| 摘要 |
PURPOSE: A semiconductor device and a manufacturing method thereof are provided to suppress diffusion of Mn by adding Cu, Mn, and N to a metal layer formed on a high fusion metal layer. CONSTITUTION: An insulation layer(21) includes oxygen formed on an upper side of a semiconductor substrate. A concave part(21T) is formed on the insulation layer. A high fusion metal layer is formed on an inner wall of the concave part. The metal layer includes Cu, Mn, and N formed on the high fusion metal layer. The Cu layer is formed on the metal layer and fills the concave part. The metal layer is comprised of single layer or multilayer. The metal layer has the thickness of 0.3 to 10 nm. The high fusion metal layer includes at least one selected from Ti, Ta, Zr, and Ru. The metal layer includes more N in the first side near the Cu layer than a second side. |
