| 摘要 |
PURPOSE: An RF split monitoring system is provided to prevent the difference of an etching rate and uniformity between wafers by distributing the RF power to a plurality of divided shower heads in a plasma chamber device. CONSTITUTION: A matching network unit(120) matches the plasma impedance of the RF power provided from a high frequency generator. The distribution network distributes the RF power which is impedance-matched by the matching network unit to the plurality of divided shower heads uniformly. A sensor(150) monitors the RF power distributed from the distribution network unit to the shower head. A shunt part(160) controls the RF power according to the impedance variation by changing impedance if the RF power is not distributed to each shower head uniformly. The shunt part is comprised of a variable capacitor and a DC motor connected to the cable of the distribution network unit. A controller(170) distributes the RF power to the showr head by controlling the shunt based on the monitoring result of the sensor uniformly. |
