| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing an SiO<SB>2</SB>film of a refractive index as extremely low as 1.20 to 1.40 by establishing a high speed deposition method of the SiO<SB>2</SB>film at ordinary temperature. <P>SOLUTION: The total concentration of the Si raw material gas and O raw material gas in a process gas which is a mixture composed of a carrier gas consisting of an inert gas, an Si raw material gas containing an Si element, and an O raw material gas containing an O element is predetermined to 0.10 to 50.0 vol%, and the process gas is introduced between a pair of electrodes facing each other. A high-frequency voltage of 10 MHz to 10 GHz is applied across electrodes to generate plasma, and SiO<SB>2</SB>is deposited at 170 to 500 nm/s deposition rate on the electrode surface of one of a pair of electrodes, by which the SiO<SB>2</SB>thin film of the refractive index 1.20 to 1.40 is formed. <P>COPYRIGHT: (C)2010,JPO&INPIT |
