| 摘要 |
A method for correcting an exposure mask including a film of mask blank having reflex function for an EUV and an absorber film patterned on the film of mask blank for absorbing the EUV, the present method includes the steps of obtaining a light energy E 0 when the EUV is vertically incident to the front surface of the mask, and when the EUV is incident to the front surface of the mask at an angle that can be considered that it is vertically incident thereto; obtaining a light energy E 1 when the EUV is obliquely incident to the front surface of the mask and the EUV is reflected; and correcting the mask pattern in accordance with the compared result of the light energies E 0 and E 1 . |
