| 摘要 |
PROBLEM TO BE SOLVED: To provide a memory element which improves thermal stability without increasing a writing current. SOLUTION: A memory layer 17 retains information based on a magnetization state of a magnetic material. A fixed-magnetization layer 31 is formed on the memory layer 17 through an insulation layer 16. The information is recorded on the memory layer 17 with a change in a magnetization M1 direction of the memory layer 17 caused by injecting a spin-polarized electron in a stacked direction. A memory element 3 whose level of effective demagnetizing field which is received by the memory layer 17, is smaller than a saturation-magnetization level of the memory layer 17, is constituted thereby. COPYRIGHT: (C)2008,JPO&INPIT
|
