| 发明名称 |
SEMICONDUCTOR APPARATUS |
| 摘要 |
A semiconductor apparatus includes a first area, a first transistor being formed in two or more divided areas of the first area, and a second area, a second transistor being formed in two or more divided areas of the second area. The number of areas of the second area is greater than the number of areas of the first area, the divided areas of the first area and the second area are alternately arranged, and the gate pad of the first transistor and the gate pad of the second transistor are formed in the second area. |
| 申请公布号 |
US2016163698(A1) |
申请公布日期 |
2016.06.09 |
| 申请号 |
US201615044875 |
申请日期 |
2016.02.16 |
| 申请人 |
Renesas Electronics Corporation |
发明人 |
NITA Junichi;SUZUKI Kazutaka;KORENARI Takahiro;UCHINUMA Yoshimasa |
| 分类号 |
H01L27/088;H01L27/02;H01L29/78;H01L23/528;H01L21/8234;H01L21/768;H01L29/423;H01L23/535 |
主分类号 |
H01L27/088 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor apparatus comprising:
a first area, a first transistor being formed in two or more divided areas of the first area; and a second area, a second transistor being formed in two or more divided areas of the second area, wherein the number of areas of the second area is greater than the number of areas of the first area, the divided areas of the first area and the second area are alternately arranged, and a gate pad of the first transistor and a gate pad of the second transistor are formed in the second area. |
| 地址 |
Tokyo JP |
