PLASMA PROCESSING APPARATUS AND METHOD FOR THE PLASMA PROCESSING OF SUBSTRATES

摘要

A plasma processing apparatus (30, 50) comprises a process chamber with chamber walls (35), gas inlet means and gas distribution means, exhaust means and a substrate mount (34) for a substrate (33). A conductive plate (51) is arranged within said chamber, electrically connectable with an RF power source (39) facing said conductive plate (51), exhibitting a pattern of openings and arranged at a distance to a backside wall (53) of said chamber so that a process gas delivered to a gap (55) between the conductive plate (51) and said backside wall (53) does not ignite a plasma in the gap (55) during operation. In a second embodiment a first and second electrode (31, 32) are arranged within said chamber adjacent each other with a gap (38) in-between. The first electrode (31) is connectable to a RF power source (39) and the second electrode (32) is connected to ground. The second electrode exhibits a pattern of openings (36) and is arranged at a distance such that a process gas delivered to said gap does not ignite a plasma.