| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor light emitting element capable of improving internal quantum efficiency of a light emitting layer, and increasing output. <P>SOLUTION: In this nitride semiconductor light emitting element, a first buffer layer 2 is formed on one surface side of a single crystal substrate 1 for epitaxial growth; an n-type nitride semiconductor layer 3 is formed on the front surface side of the first buffer layer 2; a third buffer layer 5 is formed on the front surface side of the n-type nitride semiconductor layer 3 through a second buffer layer 4; a light emitting layer 6 is formed on the front surface side of the third buffer layer 5; and a p-type nitride semiconductor layer 7 is formed on the front surface side of the light emitting layer 6. The third buffer layer 5 is provided for reducing threading dislocation and residual strain of the light emitting layer 6, improving planarity of a base of the light emitting layer 3, and moderating a piezoelectric field of the light emitting layer 6 by using carriers generated in the third buffer layer 5, and Si is added to the third buffer layer as an impure substance acting as a donor. <P>COPYRIGHT: (C)2010,JPO&INPIT |
