| 摘要 |
<p>A fin field effect transistor (300), the fin field effect transistor (300) comprising a substrate (302), a fin (304) formed on the substrate (302) along a fin alignment direction (306), a control gate (308) formed partially over the fin (304) and partially on the substrate (302) along a gate alignment direction (310) which differs from the fin alignment direction (306), and a spacer (312) of a uniform thickness covering a vertical sidewall of the control gate (308) adjacent the fin (304).</p> |
