发明名称 |
METHOD FOR FORMING PATTERNED PHOTORESIST LAYER |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a new method for forming a patterned sloping photoresist layer. <P>SOLUTION: This method for forming the patterned photoresist layer wherein the patterned photoresist layer and a substrate have a contact angle that is not right-angle includes steps: for providing the substrate having the upper face and the lower face; for forming a photoresist layer on the upper face of the substrate; for providing a transparent layer on the photoresist layer; for providing a light-shielding layer on the transparent layer; for providing an exposure source supplying light passing the light-shielding layer and the transparent layer, and exposing the photoresist layer; and for developing the photoresist layer to form the patterned photoresist layer. <P>COPYRIGHT: (C)2010,JPO&INPIT |
申请公布号 |
JP2009237527(A) |
申请公布日期 |
2009.10.15 |
申请号 |
JP20080231066 |
申请日期 |
2008.09.09 |
申请人 |
IND TECHNOL RES INST |
发明人 |
HUANG MENG-CHI;LIN CHENG-HSUAN;CHO FUKUYU |
分类号 |
G03F7/26;G03F7/09;G03F7/11;G03F7/20;H01L21/027 |
主分类号 |
G03F7/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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