| 摘要 |
<P>PROBLEM TO BE SOLVED: To manufacture an auxiliary pattern phase shift mask, without impairing the quality. Ž<P>SOLUTION: Regarding a photomask blank, a light-shielding film 2 and a thin film for forming an etching mask layer 3a are successively formed on a transparent substrate 1, and the photomask blank is used for manufacturing a phase shift mask. The light-shielding film 2 is a film with a function of practically not transmitting exposure light and comprises the silicide of a refractory metal including nitrogen, and the thin film for forming the etching mask layer 3a comprises a metal compound, containing nitrogen, which is a material resistant against the etching of the light-shielding film 2. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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