WAFER BONDING METHOD AND BONDED WAFER STRUCTURE USING THE SAME

摘要

PURPOSE: A wafer bonding method is provided to improve throughput by performing a manufacturing process of various insulation wafers at a time. CONSTITUTION: A first wafer and a plurality of second wafers are provided(S10). A size of the first wafer is larger than a size of the second wafer. An intermediate material layer is formed in at least one among a bonding surface of the first wafer and a bonding surface of the second wafer(S20). A coefficient of thermal expansion of the intermediate material layer is larger than a coefficient of thermal expansion of the first wafer and the second wafer. The first wafer and the second wafers are bonded(S30).