| 摘要 |
FIELD: physics. ^ SUBSTANCE: invention relates to a method of etching through magnetron sputtering in a vacuum chamber (2) of a metal strip (4), moving on a supporting roll (3) opposite a counter electrode (5). In the gas near the metal strip (4), plasma is formed so as to form radicals and/or ions which act on the strip (4). At least one closed magnetic circuit (7), the width of which is essentially equal to the width of the metal strip (4), is chosen from a group of at least two closed magnetic circuits (7) of different and fixed width. The chosen magnetic circuit (7) is then moved so as to position it opposite the metal strip (4) and the moving metal strip (4) is etched. ^ EFFECT: uniform processing of the entire surface without damaging the supporting roll. ^ 21 cl, 2 dwg |
