| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a field-effect transistor high in mobility. Ž<P>SOLUTION: This field effect transistor includes, on a substrate, at least a semiconductor layer, a protective layer of the semiconductor layer, a source electrode, a drain electrode, a gate insulation film, and a gate electrode. In the field effect transistor, the source electrode and the drain electrode are connected to each other through the semiconductor layer; the gate insulation film is located between the gate electrode and the semiconductor layer; the protector layer is provided at least on one surface side of the semiconductor layer; the thickness of the semiconductor layer is 1-100 nm; and the distance between the source electrode and the drain electrode is 0.5-50 μm. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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