DEPOSTION OF POLYCRYSTALLINE ALN FILMS ON 3C-SIC BUFFER LAYERS FOR MEMS OR NEMS APPLICATIONS

摘要

PURPOSE: A method for depositing an aluminium nitride film for a micro or nano electromechanical system on a poly-crystal silicon carbide buffer layer is provided to improve thermal and chemical properties and mechanical property by wide energy band gap and high thermal conductivity. CONSTITUTION: A method for depositing an aluminium nitride film for a micro or nano electromechanical system on a poly-crystal silicon carbide buffer layer comprises following steps. A silicon dioxide layer of 800 nm is grown in a silicon substrate through a wet thermal oxidation process(S10). A poly-crystal silicon carbide thin film of 300 nm thickness is evaporated in the silicon substrate(S20). An aluminium nitrate membrane of 400 nm thickness is evaporated in the silicon substrate in which the poly-crystal silicon carbide thin film is evaporated(S30).