METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a semiconductor device is provided to improve the reliability of a semiconductor device through reduction of resistance of a word line. CONSTITUTION: A method for fabricating a semiconductor device is comprised of the steps: forming a plurality of pillar patterns on a substrate(31); burying a first conductive films to fill the pillar pattern gap; forming a first hard mask layer pattern on adjacent pillar patterns in one direction; etching a first conductive film with a first hard mask layer pattern as an etching barrier; forming a second mask pattern on a pillar patterns which are adjacent in the other direction; and etching the first conductive film with a second hard mask pattern as an etching barrier and forming the gate electrode surrounding the pillar pattern.