发明名称 |
METHOD OF FORMING MASK FOR LITHOGRAPHY, METHOD OF FORMING MASK DATA FOR LITHOGRAPHY, METHOD OF MANUFACTURING BACK-ILLUMINATED SOLID-STATE IMAGING DEVICE, BACK-ILLUMINATED SOLID-STATE IMAGING DEVICE AND ELECTRONIC DEVICE |
摘要 |
A method of forming a mask for lithography includes the step of forming the mask by using reverse data in which positions of at least part of output terminals are reversed, when forming the mask for lithography used for manufacturing a back-illuminated solid-state imaging device which takes incident light from the side of a surface opposite to the side of a surface on which wiring of a device region in which photoelectric conversion elements are formed is formed.
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申请公布号 |
US2009243022(A1) |
申请公布日期 |
2009.10.01 |
申请号 |
US20090395948 |
申请日期 |
2009.03.02 |
申请人 |
SONY CORPORATION |
发明人 |
MABUCHI KEIJI |
分类号 |
H01L27/14;G03F1/68;G06F17/50;H01L27/146;H01L31/18;H04N5/335;H04N5/341;H04N5/353;H04N5/369;H04N5/374 |
主分类号 |
H01L27/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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