| 摘要 |
PURPOSE: A semiconductor device and a method of manufacturing the same are provided to prevent deterioration of a leakage current by minimizing a passing gate effect. CONSTITUTION: A semiconductor device includes a semiconductor substrate(102), an element isolation film(104), and an operation gate and passing gate. The semiconductor substrate has an active area(A) in which a part for gate is recessed and the element isolation region(F) limiting the active area. The element isolation film is formed within the element isolation region of the semiconductor substrate, and the element isolation film is recessed so that a region where the part for gate is folded is protruded.
|
