METHOD OF MANUFACTURING SEMICONDUCTOR ELEMENT

摘要

<P>PROBLEM TO BE SOLVED: To reduce variations in etching due to an etching time by subjecting an accidentally formed layer to an anisotropic etching and to improve controllability for a wraparound etching by etching an optional layer by a constant amount through anisotropic etching. Ž<P>SOLUTION: A method of manufacturing a semiconductor element in which a second layer laminated on a surface of a first layer is horizontally etched includes a step of vertical anisotropic etching 10 from the side of the second layer to the side of the first layer and a step of horizontal isotropic etching 11 of the first layer. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž