| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device, along with its manufacturing method, of which resistance of a bit line and word line is low. SOLUTION: The semiconductor device includes a bit line BL including a first silicide layer and a first polysilicon layer 6, a second silicon layer 14 including a base part 14a formed on the bit line BL and a column-like body part 14c provided upright on the base part 14a, a source drain region SD<SB>1</SB>formed at the base part 14a, a first silicon layer 13 which penetrates a part of the bit line BL to connect a substrate 1 to a second silicon layer 14, a gate electrode 18 which covers the body part 14c through a gate insulating film 17 that covers the body part 14c, a word line WL including a second silicide layer and a second polysilicon layer 23 that are formed on the body part 14c and connected to the gate electrode 18, and a third silicon layer 34 comprising a source drain region SD<SB>2</SB>which penetrates the word line WL and is connected to the upper part of the body part 14c. COPYRIGHT: (C)2009,JPO&INPIT
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